PART |
Description |
Maker |
S8050 |
Collector-base breakdown voltage
|
TY Semiconductor Co., Ltd
|
2SC3361 |
Fast switching speed. High breakdown voltage.Collector-base voltage VCBO 60 V
|
TY Semiconductor Co., Ltd
|
2SA1179 |
High breakdown voltage Collector-base voltage VCBO -55 V
|
TY Semiconductor Co., Ltd
|
93C56 93C56AEP 93C56AESN 93C56BESN 93C56BEP |
2K 5.0V Automotive Temperature Microwire Serial EEPROM 2K 5.0V Automotive Temperature Microwire Serial EEPROM Dissipation, Pd:22.2W; Package/Case:MiniDIP; C-E Breakdown Voltage:600V IGBT Module; Continuous Collector Current, Ic:5A; Collector Emitter Saturation Voltage, Vce(sat):1.6V; Power Dissipation, Pd:16.7W; C-E Breakdown Voltage:600V; Collector Current:5A; Collector Emitter Voltage, Vceo:600V RoHS Compliant: No
|
Microchip Technology Inc.
|
74HC HCMOS 74HCT 74HCU |
: Conductor AWG#18 to #22; Termination Style: Crimping; Current Rating(Amps)(Max.): 5; Contact Mating Area Plating: Palladium; Operating Temperature Small Signal Bipolar Transistor; Collector Emitter Voltage, Vceo:100V; Transistor Polarity:N Channel; C-E Breakdown Voltage:100V; DC Current Gain Min (hfe):30; Package/Case:R245; Collector Base Voltage:120V HCMOS family characteristics
|
Philips Semiconductors NXP Semiconductors
|
2SA1625 |
High voltage switch. Collector-base voltage: Vcbo = -400V. Collector-emitter voltage: Vceo = -400V. Emitter-base voltage Vebo = -7V. Collector dissipation: Pc(max) = o.75W.
|
USHA India LTD
|
2N6515 |
High voltage transistor. Collector-emitter voltage: Vceo = 250V. Collector-base voltage: Vcbo = 250V. Collector dissipation: Pc(max) = 625mW.
|
USHA India LTD
|
UMC3NT1 UMC3NT2 UMC5NT1G UMC3NT2G |
Dual Common Base-Collector Bias Resistor Transistors Dual Common Base−Collector Bias Resistor Transistors 100 mA, 50 V, 2 CHANNEL, NPN AND PNP, Si, SMALL SIGNAL TRANSISTOR
|
Rectron Semiconductor
|
2SC3513 |
Collector-base voltage VCBO 15 V Collector-emitter voltage VCEO 11 V
|
TY Semiconductor Co., Ltd
|
2SD2211 |
High breakdown voltage Low collector output capacitance High transition frequency
|
TY Semiconductor Co., L...
|
NTE15049AC NTE15040-ECG NTE15048-ECG NTE15050AC NT |
Surge arrester (gas filled). Nominal breakdown voltage 240VAC. Surge arrester (gas filled). Nominal breakdown voltage 600VDC Surge arrester (gas filled). Nominal breakdown voltage 230VDC Surge arrester (gas filled). Nominal breakdown voltage 300VDC Surge arrester (gas filled). Nominal breakdown voltage 90VDC Surge arrester (gas filled). Nominal breakdown voltage 110VDC Surge Arresters (Gas Filled) 避雷器(充气 Surge arrester (gas filled). Nominal breakdown voltage 350VDC Surge arrester (gas filled). Nominal breakdown voltage 145VDC Surge arrester (gas filled). Nominal breakdown voltage 470VDC Surge arrester (gas filled). Nominal breakdown voltage 75VDC Surge arrester (gas filled). Nominal breakdown voltage 120VAC.
|
NTE Electronics, Inc.
|
2SA1608 |
High fT: fT=400MHz. Collector-base voltage VCBO -60 V
|
TY Semiconductor Co., Ltd
|